Title :
Development of Semiconductor Gamma-Camera System with CdZnTe Detectors
Author :
Ogawa, Koichi ; Ohta, Atsushi ; Shuto, Keisei ; Motomura, Nobutoku ; Kobayashi, Hiroaki ; Makino, Shunichiro ; Nakahara, Tadaki ; Kubo, Atsushi
Author_Institution :
Dept. of Electron. Informatics, Hosei Univ., Tokyo
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
A CdZnTe semiconductor detector, which works at room temperature, may realize a next generation gamma-camera system due to its high spatial resolution and high energy resolution. We made a prototype gamma-camera system with CdZnTe detectors to evaluate the feasibility of the semiconductor gamma-camera. This paper described our prototype system and some results obtained with this system.
Keywords :
II-VI semiconductors; cadmium compounds; gamma-ray detection; semiconductor counters; zinc compounds; CdZnTe detectors; high energy resolution; high spatial resolution; room temperature; semiconductor detector; semiconductor gamma-camera system; Cameras; Collimators; Energy resolution; Gamma ray detection; Gamma ray detectors; Prototypes; Single photon emission computed tomography; Size measurement; Solid scintillation detectors; Spatial resolution;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.354402
