DocumentCode :
46276
Title :
Electrical Comparison of 
and 
Gate Dielectrics on GaN
Author :
Bothe, Kyle M. ; von Hauff, Peter A. ; Afshar, Ahmad ; Foroughi-Abari, Ali ; Cadien, Kenneth C. ; Barlage, D.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
4119
Lastpage :
4124
Abstract :
A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated for MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm2/Vs for ZrO2 and 250 cm2/Vs for HfO2 films on GaN. Furthermore, the low density of dielectric-semiconductor interface traps confirmed a reliable cohesion between the high-κ and GaN. The improved gate dielectric deposition technique has the capabilities to improve the overall quality of GaN-based MOSFETs.
Keywords :
MOSFET; atomic layer deposition; capacitance; hafnium compounds; high-k dielectric thin films; interface states; zirconium compounds; GaN; HfO2; MOS applications; MOSFET; ZrO2; capacitance density; dielectric-semiconductor interface traps; field effect mobility; gate dielectric deposition technique; high-k dielectric films; improved growth method; low-temperature atomic layer deposition technique; Capacitance; Dielectric measurement; Dielectrics; Gallium nitride; Hafnium compounds; Logic gates; Scattering; Atomic layer deposition (ALD); GaN MOS; MOS capacitors (MOSCAP); high-$kappa$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2283802
Filename :
6626665
Link To Document :
