DocumentCode :
46349
Title :
Frequency-Modulated Lorentz Force Magnetometer With Enhanced Sensitivity via Mechanical Amplification
Author :
Mo Li ; Nitzan, Sarah ; Horsley, David A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA, USA
Volume :
36
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
62
Lastpage :
64
Abstract :
This letter presents a micromachined silicon Lorentz force magnetometer, which consists of a flexural beam resonator coupled to current-carrying silicon beams via a microleverage mechanism. The flexural beam resonator is a force sensor, which measures the magnetic field through resonant frequency shift induced by the Lorentz force, which acts as an axial load. Previous frequency-modulated Lorentz force magnetometers suffer from low sensitivity, limited by both fabrication restrictions and lack of a force amplification mechanism. In this letter, the microleverage mechanism amplifies the Lorentz force, thereby enhancing the sensitivity of the magnetometer by a factor of 42. The device has a measured sensitivity of 6687 ppm/(mA · T), which is two orders of magnitude larger than the prior state-of-the-art. The measured results agree with an analytical model and finite-element analysis. The frequency stability of the sensor is limited by the quality factor (Q) of 540, which can be increased through improved vacuum packaging.
Keywords :
Q-factor; amplification; beams (structures); bending; elemental semiconductors; finite element analysis; force measurement; force sensors; frequency stability; magnetic field measurement; magnetometers; micromachining; micromechanical resonators; microsensors; silicon; Si; analytical model; current carrying silicon beam; finite element analysis; flexural beam resonator; force amplification mechanism; force sensor; frequency modulated Lorentz force magnetometer; frequency stability; magnetic field measurement; mechanical amplification; microleverage mechanism; micromachined silicon Lorentz force magnetometer; quality factor; resonant frequency shift; sensitivity enhancement; vacuum packaging; Frequency measurement; Frequency modulation; Lorentz covariance; Magnetic resonance; Magnetometers; Sensitivity; Frequency modulation; magnetometers; microelectromechanical systems (MEMS); sensor phenomena and characterization;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2372617
Filename :
6960865
Link To Document :
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