Title :
Automatic tuning circuit for bulk-controlled subthreshold MOS resistors
Author :
Vlassis, S. ; Khateb, Fabian
Author_Institution :
Phys. Dept., Patras Univ., Rio Patras, Greece
Abstract :
A simple automatic tuning circuit is proposed which is suitable for controlling very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2 MΩ nominal value presents about ± 0.6% variation for -20-80°C temperature range, ±5% variation at process/temperature (P/T) corners and total harmonic distortion = -42 dB for differential signals. The supply voltage was VDD = 1 V and the current consumption was about 470 nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35 μm CMOS process.
Keywords :
CMOS integrated circuits; MOSFET; circuit tuning; harmonic distortion; resistors; CMOS; automatic tuning circuit; bulk-controlled sub-threshold MOS resistors; channel resistance; process/temperature corners; resistance 1.2 Mohm; size 0.35 mum; total harmonic distortion; voltage 1 V; weak-inverted transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.4181