• DocumentCode
    464334
  • Title

    High-Power Operation of Quantum Cascade Lasers Endured Prolonged Air-Oxidation

  • Author

    Shao, Ye ; Liu, Feng-Qi ; Li, Lu ; Lu, Xiu-Zhen ; Liu, Jun-Qi ; Wang, Zhan-Guo

  • Author_Institution
    Chinese Acad. of Sci., Beijing
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    40
  • Lastpage
    40
  • Abstract
    High-power strain-compensated In1-xGaxAs/In1-yAlyAs quantum cascade lasers (lambda~5.5 mum) are demonstrated. Peak power at least 1.2 W per facet for a 32 mum times 2 mm uncoated laser stored in ambient condition for 240 days, is obtained at 80 K. Considering the collection efficiency of 60%, the actual output power is 4 W at this temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; oxidation; quantum cascade lasers; In1-xGaxAs-In1-yAlyAs; high-power strain-compensated lasers; output power; prolonged air-oxidation; quantum cascade lasers; Degradation; Face detection; Optical devices; Optical pulses; Oxidation; Power generation; Protection; Pulse measurements; Quantum cascade lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368249
  • Filename
    4221983