DocumentCode
464764
Title
A SiGe BiCMOS Variable Gain Amplifier for Cryogenic Temperature Applications
Author
Cao, Tiejun ; Hoang, Hung P. ; Woods, Beth O. ; Mantooth, H. Alan
Author_Institution
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR
fYear
2007
fDate
27-30 May 2007
Firstpage
949
Lastpage
952
Abstract
We investigate, for the first time, the design and implementation of a variable gain amplifier (VGA) circuit suitable for cryogenic temperature applications. Temperature compensation is studied to allow for such a large temperature swing. The proposed circuit is capable of operating at temperatures as low as 43 K. The device is fabricated in IBM silicon-germanium (SiGe) BiCMOS 5AM technology.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; amplifiers; cryogenic electronics; BiCMOS variable gain amplifier; SiGe; cryogenic temperature applications; temperature compensation; BiCMOS integrated circuits; Cryogenics; Gain; Germanium silicon alloys; Moon; NASA; Silicon germanium; Space technology; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378083
Filename
4252793
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