Title :
A SiGe BiCMOS Variable Gain Amplifier for Cryogenic Temperature Applications
Author :
Cao, Tiejun ; Hoang, Hung P. ; Woods, Beth O. ; Mantooth, H. Alan
Author_Institution :
Dept. of Electr. Eng., Arkansas Univ., Fayetteville, AR
Abstract :
We investigate, for the first time, the design and implementation of a variable gain amplifier (VGA) circuit suitable for cryogenic temperature applications. Temperature compensation is studied to allow for such a large temperature swing. The proposed circuit is capable of operating at temperatures as low as 43 K. The device is fabricated in IBM silicon-germanium (SiGe) BiCMOS 5AM technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; amplifiers; cryogenic electronics; BiCMOS variable gain amplifier; SiGe; cryogenic temperature applications; temperature compensation; BiCMOS integrated circuits; Cryogenics; Gain; Germanium silicon alloys; Moon; NASA; Silicon germanium; Space technology; Temperature; Transconductance;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378083
