• DocumentCode
    464817
  • Title

    Threshold Voltage Variation Effects on Aging-Related Hard Failure Rates

  • Author

    Greskamp, Brian ; Sarangi, Smruti R. ; Torrellas, Josep

  • Author_Institution
    Illinois Univ., Urbana-Champaign, IL
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    1261
  • Lastpage
    1264
  • Abstract
    This paper quantifies the impact of threshold voltage variation on aging-related hard failure rates in a high-performance 65nm processor. Simulations show that threshold voltage variations can accelerate aging substantially, depending on the thermal resistance of the heatsink and the total leakage power of the processor before variation. For unfavorable values of these parameters, our models suggest that the time at which 1% of the processors have failed can decrease by about 60%.
  • Keywords
    heat sinks; microprocessor chips; thermal resistance; 65 nm; aging-related hard failure rates; heat sink; high-performance processor; thermal resistance; threshold voltage variation effects; Aging; Electromigration; Energy consumption; Failure analysis; Packaging; Temperature dependence; Thermal degradation; Thermal resistance; Thermal stresses; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.378340
  • Filename
    4252875