DocumentCode
464817
Title
Threshold Voltage Variation Effects on Aging-Related Hard Failure Rates
Author
Greskamp, Brian ; Sarangi, Smruti R. ; Torrellas, Josep
Author_Institution
Illinois Univ., Urbana-Champaign, IL
fYear
2007
fDate
27-30 May 2007
Firstpage
1261
Lastpage
1264
Abstract
This paper quantifies the impact of threshold voltage variation on aging-related hard failure rates in a high-performance 65nm processor. Simulations show that threshold voltage variations can accelerate aging substantially, depending on the thermal resistance of the heatsink and the total leakage power of the processor before variation. For unfavorable values of these parameters, our models suggest that the time at which 1% of the processors have failed can decrease by about 60%.
Keywords
heat sinks; microprocessor chips; thermal resistance; 65 nm; aging-related hard failure rates; heat sink; high-performance processor; thermal resistance; threshold voltage variation effects; Aging; Electromigration; Energy consumption; Failure analysis; Packaging; Temperature dependence; Thermal degradation; Thermal resistance; Thermal stresses; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378340
Filename
4252875
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