Title :
An Improved Temperature Compensation Technique for Current Biasing
Author :
Arbat, A. ; Dieguez, A. ; Samitier, J.
Author_Institution :
Departament d´´Electronica, Univ. de Barcelona
Abstract :
A novel current source architecture is presented operating at 1.2 V for low power applications. The source has improved temperature compensation with respect to reported works. The circuit has been designed and fabricated in a 0.13mum ultra low power CMOS technology. The output current is 1 muA with measured variations less than 20 nA from RT up to 70degC.
Keywords :
CMOS integrated circuits; compensation; constant current sources; low-power electronics; 0.13 micron; 1 muA; 1.2 V; 70 C; CMOS technology; current biasing; current source architecture; temperature compensation; CMOS technology; Circuits; Current measurement; Resistors; Silicon carbide; Sun; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378351
