DocumentCode
464912
Title
An Improved Temperature Compensation Technique for Current Biasing
Author
Arbat, A. ; Dieguez, A. ; Samitier, J.
Author_Institution
Departament d´´Electronica, Univ. de Barcelona
fYear
2007
fDate
27-30 May 2007
Firstpage
1923
Lastpage
1926
Abstract
A novel current source architecture is presented operating at 1.2 V for low power applications. The source has improved temperature compensation with respect to reported works. The circuit has been designed and fabricated in a 0.13mum ultra low power CMOS technology. The output current is 1 muA with measured variations less than 20 nA from RT up to 70degC.
Keywords
CMOS integrated circuits; compensation; constant current sources; low-power electronics; 0.13 micron; 1 muA; 1.2 V; 70 C; CMOS technology; current biasing; current source architecture; temperature compensation; CMOS technology; Circuits; Current measurement; Resistors; Silicon carbide; Sun; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378351
Filename
4253040
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