DocumentCode :
464959
Title :
Fault Tolerance Circuit for AM-OLED
Author :
Li, Dayong ; Liu, Ming ; Wang, Wei
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing
fYear :
2007
fDate :
27-30 May 2007
Firstpage :
2272
Lastpage :
2274
Abstract :
A novel circuit employing p-type low-temperature poly-Si thin-film transistors is introduced for active matrix-organic light-emitting diode (AM-OLED) circuits to automatically detect short defects and switch to a spare OLED. This design maintains the luminance of the OLED pixel without changing the driving current in the event of defects. Experimental results show that not only is fault tolerance capability obtained during operation, but also a significant amount (around 90%) of power consumption is saved compared with the standard driving circuits.
Keywords :
active networks; fault tolerance; organic light emitting diodes; thin film transistors; AM-OLED; active matrix-organic light-emitting diode circuits; fault tolerance circuit; p-type low-temperature poly-Si thin-film transistors; Energy consumption; Fault tolerance; Flat panel displays; Inverters; Microelectronics; Organic light emitting diodes; Switches; Switching circuits; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
Type :
conf
DOI :
10.1109/ISCAS.2007.378840
Filename :
4253127
Link To Document :
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