DocumentCode
465052
Title
Scalable Gate-Level Models for Power and Timing Analysis
Author
Badaroglu, Mustafa ; Van der Plas, Geert ; Wambacq, Piet ; Donnay, Stéphane ; Gielen, Georges ; De Man, Hugo
Author_Institution
AMI Semicond., Vilvoorde
fYear
2007
fDate
27-30 May 2007
Firstpage
2938
Lastpage
2941
Abstract
In this paper we present a macromodeling methodology to accurately reproduce the timing and the peak/average power behaviors of digital standard cells for a wide range of operating conditions determined by the load, the input transition time, and the supply variations. Our methodology significantly reduces the number of transient simulations for the cell characterization. The numerical results for the transient simulation of large digital systems indicate that we achieve a mean error of 10% for the power consumption and 4% for the propagation delay of the complete digital system while the mean error for the used gates in this system is 2.5% when compared to SPICE-based simulations.
Keywords
CMOS digital integrated circuits; circuit simulation; integrated circuit modelling; SPICE-based simulations; cell characterization; digital standard cells; large digital systems; macromodeling methodology; peak/average power behaviors; power analysis; scalable gate-level models; timing analysis; transient simulations; Capacitance; Circuits; Current supplies; Digital systems; Energy consumption; Power system modeling; Semiconductor device modeling; Shape control; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.377865
Filename
4253294
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