• DocumentCode
    465263
  • Title

    Statistical Analysis of Full-Chip Leakage Power Considering Junction Tunneling Leakage

  • Author

    Li, Tao ; Yu, Zhiping

  • Author_Institution
    Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    4-8 June 2007
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    In this paper we address the the growing issue of junction tunneling leakage (Ijunc) at the circuit level. Specifically, we develop a fast approach to analyze the state-dependent total leakage power of a large circuit block, considering Ijunc, sub-threshold leakage (Isub), and gate oxide leakage (Igate). We then propose our algorithm to estimate the full-chip leakage power with consideration of both Gaussian and non- Gaussian parameter distributions, capturing spatial correlations using a grid-based model. Experiments on ISCAS85 benchmarks demonstrate that the estimated results are very accurate and efficient. For a circuit with G gates, the complexity of our approach is O(G).
  • Keywords
    CMOS integrated circuits; Gaussian distribution; circuit complexity; integrated circuit design; leakage currents; statistical analysis; circuit block; circuit level; full-chip leakage power; gate oxide leakage; grid-based model; junction tunneling leakage; non-Gaussian parameter distributions; spatial correlations; statistical analysis; sub-threshold leakage; Algorithm design and analysis; CMOS technology; Circuits; Independent component analysis; Leakage current; MOS devices; Microelectronics; Principal component analysis; Statistical analysis; Tunneling; Algorithm; Design; Gaussian and non-Gaussian parameter distributions; Performance; Reliability; Statistical analysis; junction tunneling leakage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2007. DAC '07. 44th ACM/IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-59593-627-1
  • Type

    conf

  • Filename
    4261151