Effects of Standard Free Energy on NiO Bipolar Resistive Switching Devices

Author

Guokun Ma ; Xiaoli Tang ; Hua Su ; Yuanxun Li ; Huaiwu Zhang ; Zhiyong Zhong

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Chengdu, China

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1237

Lastpage

1240

Abstract

Metal/NiO/Pt films with various electrodes were fabricated to investigate the effects of standard free energy (SFE) on NiO resistive switching devices. By selecting Ti, Ta, Ag, Cu, and Co as the top electrodes (TEs), we found that the switching voltage was inversely proportional to the SFE. The reason for this is attributed to the different thicknesses of the oxidized interface between TE and NiO. Since the thickness of the oxidized interface depends on the SFE, this paper provides an effective way to control and adjust the switching voltage.

Keywords

cobalt; copper; electrodes; magnetic thin films; nickel compounds; platinum; random-access storage; silver; tantalum; titanium; Ag; Co; Cu; NiO-Pt; Ta; Ti; bipolar resistive switching devices; oxidized interface; standard free energy; top electrodes; Educational institutions; Electrodes; Electron devices; Materials; Metals; Switches; Voltage measurement; NiO; resistive random access memory (RRAM); resistive switching; the standard free energy; the standard free energy.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2309975

Filename

6777282