Si-Based Resonant Interband Tunnel Diode/CMOS Integrated Memory Circuit

Author

Sudirgo, Stephen ; Pawlik, David J. ; Hirschman, Karl D. ; Rommel, Sean L. ; Kurinec, Santosh K. ; Thompson, Phillip E. ; Berger, Paul R.

Author_Institution

Rochester Inst. of Technol., Rochester

fYear

2006

fDate

25-28 June 2006

Firstpage

109

Lastpage

112

Abstract

The development of Si-based tunneling-based static random access memory (TSRAM) has been described. This multi-institutional research endeavor has successfully demonstrated for the first time an integrated TSRAM that utilizes Si/SiGe resonant interband tunnel diode (RITD) and conventional NMOS. The memory cell exhibits a bistable latching operation at a low power supply voltage below 0.5 V. The key to success in the tunnel diode-based novel memory research at RIT is mutual collaboration between the institutions from the universities, government, and industry, which provides a hotbed for technological innovations and creativity.

Keywords

CMOS memory circuits; Ge-Si alloys; SRAM chips; elemental semiconductors; resonant tunnelling diodes; silicon; CMOS integrated memory circuit; NMOS; RITD; Si; Si-based resonant interband tunnel diode; Si-based tunneling-based static random access memory; SiGe; TSRAM; resonant interband tunnel diode; CMOS memory circuits; Collaboration; Diodes; Germanium silicon alloys; Low voltage; MOS devices; RLC circuits; Resonance; SRAM chips; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 2006 16th Biennial

Conference_Location

San Jose, CA

ISSN

0749-6877

Print_ISBN

1-4244-0267-0

Type

conf

DOI

10.1109/UGIM.2006.4286363

Filename

4286363