DocumentCode
466645
Title
The Design of MOS-BJT-NDR-Based Cellular Neural Network
Author
Liang, Dong-Shong ; Chen, Yaw-Hwang ; Wen, Chun-Min ; Tu, Chun-Da ; Gan, Kwang-Jow ; Tsai, Cher-Shiung
Author_Institution
Kun Shan Univ., Tainan
fYear
2006
fDate
25-28 June 2006
Firstpage
189
Lastpage
190
Abstract
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices and bipolar transistor (BJT). Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; bipolar transistors; cellular neural nets; negative resistance devices; BiCMOS process; MOS-BJT-NDR; bipolar transistor; cellular neural network; metal-oxide semiconductor field-effect transistor devices; negative differential resistance devices; standard CMOS process; Cellular networks; Cellular neural networks; Circuits; FETs; Gallium nitride; Logic devices; MOS devices; MOSFETs; Resonant tunneling devices; Voltage; Cellular neural network(CNN); Negative differential resistance(NDR;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location
San Jose, CA
ISSN
0749-6877
Print_ISBN
1-4244-0267-0
Type
conf
DOI
10.1109/UGIM.2006.4286379
Filename
4286379
Link To Document