Title :
The Design of MOS-BJT-NDR-Based Cellular Neural Network
Author :
Liang, Dong-Shong ; Chen, Yaw-Hwang ; Wen, Chun-Min ; Tu, Chun-Da ; Gan, Kwang-Jow ; Tsai, Cher-Shiung
Author_Institution :
Kun Shan Univ., Tainan
Abstract :
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices and bipolar transistor (BJT). Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; bipolar transistors; cellular neural nets; negative resistance devices; BiCMOS process; MOS-BJT-NDR; bipolar transistor; cellular neural network; metal-oxide semiconductor field-effect transistor devices; negative differential resistance devices; standard CMOS process; Cellular networks; Cellular neural networks; Circuits; FETs; Gallium nitride; Logic devices; MOS devices; MOSFETs; Resonant tunneling devices; Voltage; Cellular neural network(CNN); Negative differential resistance(NDR;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Conference_Location :
San Jose, CA
Print_ISBN :
1-4244-0267-0
DOI :
10.1109/UGIM.2006.4286379
