• DocumentCode
    467147
  • Title

    A Compact Model of Submicron Channel MOS Transistor Transconductance for Analog Circuit Simulation

  • Author

    Brezeanu, Gheorghe ; Sevcenco, Andrei

  • Author_Institution
    Univ. Politehnica, Bucharest
  • Volume
    1
  • fYear
    2007
  • fDate
    13-14 July 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An analytical model to estimate the submicron MOS channel transconductance is presented. The model is continuous between conditions where velocity saturation can be either dominant or negligible, depending on the CMOS processes and bias voltages. New parameters are proposed for the description of the saturation velocity effects.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; analogue simulation; CMOS; analog circuit simulation; analytical model; bias voltage; compact model; submicron channel MOS transistor transconductance; velocity saturation; Ambient intelligence; Analog circuits; Analytical models; Bandwidth; CMOS process; CMOS technology; Circuit simulation; MOSFETs; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Circuits and Systems, 2007. ISSCS 2007. International Symposium on
  • Conference_Location
    Iasi
  • Print_ISBN
    1-4244-0969-1
  • Electronic_ISBN
    1-4244-0969-1
  • Type

    conf

  • DOI
    10.1109/ISSCS.2007.4292673
  • Filename
    4292673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=467147