Title :
Wave Dispersion in the Composite Structure with Semiconductor Films
Author :
Abdulkadyrov, V.A. ; Khutoryan, E.M.
Author_Institution :
Electron. of the NASU, Usikov ´´s Inst. of Radiophys., Kharkov
Abstract :
Wave dispersion in composite structure with semiconductor films, GaAs and InSb, has been considered in this paper. The solid representation of dependence of increment of growth versus layer thickness and carriers velocity is shown.
Keywords :
II-VI semiconductors; III-V semiconductors; composite materials; dispersion (wave); gallium arsenide; indium compounds; semiconductor thin films; GaAs; InSb; carrier velocity; composite structure; semiconductor films; wave dispersion; Charge carriers; Dielectric substrates; Electron mobility; Equations; Frequency; Gallium arsenide; Gratings; Propagation constant; Semiconductor films; Solids;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294666
