• DocumentCode
    467269
  • Title

    Wave Dispersion in the Composite Structure with Semiconductor Films

  • Author

    Abdulkadyrov, V.A. ; Khutoryan, E.M.

  • Author_Institution
    Electron. of the NASU, Usikov ´´s Inst. of Radiophys., Kharkov
  • Volume
    1
  • fYear
    2007
  • fDate
    25-30 June 2007
  • Firstpage
    372
  • Lastpage
    374
  • Abstract
    Wave dispersion in composite structure with semiconductor films, GaAs and InSb, has been considered in this paper. The solid representation of dependence of increment of growth versus layer thickness and carriers velocity is shown.
  • Keywords
    II-VI semiconductors; III-V semiconductors; composite materials; dispersion (wave); gallium arsenide; indium compounds; semiconductor thin films; GaAs; InSb; carrier velocity; composite structure; semiconductor films; wave dispersion; Charge carriers; Dielectric substrates; Electron mobility; Equations; Frequency; Gallium arsenide; Gratings; Propagation constant; Semiconductor films; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
  • Conference_Location
    Kharkov
  • Print_ISBN
    1-4244-1237-4
  • Type

    conf

  • DOI
    10.1109/MSMW.2007.4294666
  • Filename
    4294666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=467269