High Gain and High Speed 1.3 μm InAs/InGaAs Quantum Dot Lasers

We report on the fabrication and characterization of single-transverse mode 1.3 μm InAs/InGaAs QD lasers in a wide temperature range. Open eye patterns up to 10 Gb/s are reported, whereas a characteristic temperature of about 110 K has been measured in the whole temperature range (15°C - 85°C). These results were obtained by exploiting heterostructures containing six-layers of high modal gain InAs quantum dots grown without incorporation of p-doping. QD lasers exhibited a saturation modal gain as high as 6 cm^-1 per QD layer, which linearly increases with the numbers of the quantum dot layers.