Author :
Riicker, H. ; Heinemann, B. ; Barth, R. ; Bauer, J. ; Blum, K. ; Bolze, D. ; Drews, J. ; Fischer, G.G. ; Fox, A. ; Fursenko, O. ; Grabolla, T. ; Haak, U. ; Höppner, W. ; Knoll, D. ; Köpke, K. ; Kuck, B. ; Mai, A. ; Marschmeyer, S. ; Morgenstern, T. ; Rich
Abstract :
This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mum2. A minimum gate delay of 3.0 ps was achieved for CML ring oscillators. Breakdown voltages of the HBTs are measured to be BVCEO=1.8 V, BVCBO=5.6 V, andBVEBO=1.9 V.
Keywords :
BiCMOS integrated circuits; delays; silicon compounds; BiCMOS technology; HBT; gate delay; silicon; BiCMOS integrated circuits; CMOS process; CMOS technology; Delay; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Ring oscillators; Silicon germanium;
