• DocumentCode
    468875
  • Title

    SiGe BiCMOS Technology with 3.0 ps Gate Delay

  • Author

    Riicker, H. ; Heinemann, B. ; Barth, R. ; Bauer, J. ; Blum, K. ; Bolze, D. ; Drews, J. ; Fischer, G.G. ; Fox, A. ; Fursenko, O. ; Grabolla, T. ; Haak, U. ; Höppner, W. ; Knoll, D. ; Köpke, K. ; Kuck, B. ; Mai, A. ; Marschmeyer, S. ; Morgenstern, T. ; Rich

  • Author_Institution
    IHP, Frankfurt
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    651
  • Lastpage
    654
  • Abstract
    This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315 GHz at an emitter area of 0.17 x 0.53 mum2. A minimum gate delay of 3.0 ps was achieved for CML ring oscillators. Breakdown voltages of the HBTs are measured to be BVCEO=1.8 V, BVCBO=5.6 V, andBVEBO=1.9 V.
  • Keywords
    BiCMOS integrated circuits; delays; silicon compounds; BiCMOS technology; HBT; gate delay; silicon; BiCMOS integrated circuits; CMOS process; CMOS technology; Delay; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Ring oscillators; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419028
  • Filename
    4419028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=468875