High-Speed InP HBT Technology for Advanced Mixed-signal and Digital Applications

Author

Monier, C. ; Scott, D. ; Amore, M.D. ; Chan, B. ; Dang, L. ; Cavus, A. ; Kaneshiro, E. ; Nam, P. ; Sato, K. ; Cohen, N. ; Lin, S. ; Luo, K. ; Wang, J. ; Oyama, B. ; Gutierrez, A.

Author_Institution

Northrop-Grumman Space Technol., Redondo Beach

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

671

Lastpage

674

Abstract

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. An advanced high-speed sub-micron InP double heterojunction bipolar transistor (DHBT) technology, using a 4-level front side metal interconnect along with a robust backside process has been developed to provide scaling and manufacturing capabilities for mixed-signal and digital applications of increased complexity. State-of-the-art circuits with significant improvements in resolution and bandwidth are reported.

Keywords

heterojunction bipolar transistors; interconnections; HBT technology; double heterojunction bipolar transistor; metal interconnect; state-of-the-art circuits; Bandwidth; CMOS technology; DH-HEMTs; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Manufacturing processes; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419033

Filename

4419033