Si/SiGe Epitaxy: a Ubiquitous Process for Advanced Electronics

Author

Dutartre, D. ; Loubet, N. ; Brossard, F. ; Vandelle, B. ; Chevalier, P. ; Chantre, A. ; Monfray, S. ; Fenouillet-Beranger, C. ; Pouydebasque, A. ; Skotnicki, T.

Author_Institution

STMicroelectronics, Crolles

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

689

Lastpage

692

Abstract

This contribution is focusing on low temperature epitaxy of SiGe alloys that are required in advanced devices. In a first part, we give a certain background on RTCVD and SiGe(C) materials. In a second step, we develop some specific applications important and fundamental in our technologies: selective epitaxy of SiGeC for bipolar base and Si/SiGe epitaxies for the fabrication of thin films CMOS. In each case, we present major improvements of the process capabilities or innovative structures. And finally, we propose the association of Si/SiGe epi and SiGe selective etch as an effective way to fabricate objects at the nano-scale.

Keywords

Ge-Si alloys; MOSFET; carbon; chemical vapour deposition; etching; heterojunction bipolar transistors; nanoelectronics; semiconductor epitaxial layers; silicon; thin film transistors; HBT; RTCVD; Si-SiGe; SiGeC; heterojunction bipolar transistors; low temperature silicon-germanium alloy epitaxy; nanoscale fabrication; selective etching; thin film CMOS fabrication; ubiquitous process; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Kinetic theory; Lattices; Silicon germanium; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419039

Filename

4419039