DocumentCode
468887
Title
CMOS Devices - Physics and Technologies of Mobility Enhancement
Author
Takagi, Shinichi ; Clerc, Raphael
Author_Institution
The University of Tokyo MIRAI-AIST
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
701
Lastpage
701
Keywords
CMOS technology; Capacitance; Capacitive sensors; Electric variables; Fabrication; Germanium silicon alloys; MOSFETs; Paper technology; Physics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419042
Filename
4419042
Link To Document