• DocumentCode
    468891
  • Title

    Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

  • Author

    Kuzum, Duygu ; Pethe, Abhijit J. ; Krishnamohan, Tejas ; Oshima, Yasuhiro ; Sun, Yun ; McVittie, Jim P. ; Pianetta, Piero A. ; McIntyre, Paul C. ; Saraswat, Krishna C.

  • Author_Institution
    Stanford Univ., Stanford
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    723
  • Lastpage
    726
  • Abstract
    The highest electron mobility to-date in Ge is reported. For the first time, the effect of surface orientation on mobility is investigated experimentally. Carrier scattering mechanisms are studied through low temperature mobility measurements. Ozone-oxidation has been introduced to engineer Ge/insulator interface. Minimum density of interface states (DDit) of 3x1011 cm-2 V-1 is demonstrated and Dit across the bandgap is extracted.
  • Keywords
    electron mobility; field effect transistors; germanium; germanium; high electron mobility FET; Acoustic scattering; Conducting materials; Degradation; Dielectric substrates; Electron mobility; Light scattering; MOS devices; Photonic band gap; Plasma temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419048
  • Filename
    4419048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=468891