DocumentCode :
469366
Title :
Formation of Er-Germanides from Ti-capped Er Thin Films on Ge(001)
Author :
Liew, S.L. ; Balakrisnan, B. ; Lai, M.Y. ; Chi, D.Z.
Author_Institution :
Inst. of Mater. Res. & Eng., Singapore
fYear :
2006
fDate :
11-14 Dec. 2006
Firstpage :
1
Lastpage :
3
Abstract :
The solid-state reaction between Ti-capped Er thin film and Ge(001) was investigated. The germanide film formed had a smooth morphology with the phase identified as ErGe1.5. The film is highly textured with ErGe1.5 (1100) //Ge(001). ErGe1.5 has a resistivity value ~18 muOmega.cm. The Ti cap was able to delay the erbium oxide formation to higher temperature.
Keywords :
erbium; germanium; semiconductor thin films; surface diffusion; surface morphology; titanium; Er-Ti-Ge; Ge(001); smooth morphology; solid-state reaction; thin films; Annealing; Conductivity; Erbium; Morphology; Scanning electron microscopy; Silicides; Solid state circuits; Substrates; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4244-0834-4
Electronic_ISBN :
978-1-4244-0834-4
Type :
conf
DOI :
10.1109/EMAP.2006.4430596
Filename :
4430596
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=469366
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