• DocumentCode
    469615
  • Title

    Silicon photomultiplier light response properties

  • Author

    Bosio, Carlo ; Kuznetsova, Ekaterina ; Gentile, Simonetta ; Meddi, Franco

  • Author_Institution
    INFN, Rome
  • Volume
    3
  • fYear
    2007
  • fDate
    Oct. 26 2007-Nov. 3 2007
  • Firstpage
    2097
  • Lastpage
    2098
  • Abstract
    The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse kinds of silicon photomultiplier. The response to low-intensity light was studied for silicon photomultipliers produced by MEPhI/PULSAR (Russia), CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).
  • Keywords
    photomultipliers; silicon radiation detectors; CPTA; Hamamatsu; ITC-irst; MEPhI/PULSAR; SensL; low-intensity light; silicon photomultiplier; Breakdown voltage; Current measurement; Light emitting diodes; Manufacturing; Nuclear and plasma sciences; Photomultipliers; Sensor phenomena and characterization; Silicon; Temperature sensors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-0922-8
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2007.4436567
  • Filename
    4436567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=469615