CMOS APS sensor characterization with infrared, visible and ultraviolet laser sources

A system allowing for deep investigation of charge collection properties of active pixel particle detectors fabricated in standard 0.18 mum CMOS bulk technology (i.e. without epitaxial layer) has been devised and implemented. The system includes an advanced laser test bench featuring fast laser pulser (68 ps, 80 MHz) and different laser heads (UV 407 nm, VIS 783 nm, IR 1060 nm), as well as integrated movement and acquisition capabilities. In particular, the sub-micron focusing and positioning capabilities of the whole system enable efficient, fast and versatile sensor characterization. Extensive test have been carried out, with the aim of evaluating the sensitivity, the spatial resolution and the efficiency of APS CMOS sensors with different wavelength laser stimuli. The test system provides advanced capabilities for deep understanding of silicon particle detectors to be used in high energy physics experiments and/or medical imaging systems.