• DocumentCode
    469920
  • Title

    Development of an ASIC for multi-readout X-ray CCDs

  • Author

    Matsuura, Daisuke ; Nakajima, Hiroshi ; Miyata, Emi ; Tsunemi, Hiroshi ; Doty, John P. ; Ikeda, Hirokazu

  • Author_Institution
    Osaka Univ., Osaka
  • Volume
    2
  • fYear
    2007
  • fDate
    Oct. 26 2007-Nov. 3 2007
  • Firstpage
    1073
  • Lastpage
    1077
  • Abstract
    X-ray CCDs have poor timing resolution of several seconds. Since the pixel rate is limited to keep readout noise low, we develop an application specific integrated circuit (ASIC) for multi-readout of X-ray CCDs in order to make the readout circuits small and the power consumption low. Our ASIC with the size of 3 mm times 3 mm has four channels, each channel converts the CCD outputs to 12 bits data employing a delta-sigma (DeltaSigma) digitization. The fabrication process is a 0.35 mum CMOS technology provided by Taiwan semiconductor manufacturing company (TSMC). The equivalent input noise is about 34 muV and the power consumption is about 70 mW per chip at the pixel rate of 44 kHz. When we use the X-ray CCD whose sensitivity is 3.5 muV/e- , the equivalent noise charge is 10 e- and the energy resolution is 164 eV(FWHM) at 5.9 keV.
  • Keywords
    CCD image sensors; CMOS image sensors; X-ray apparatus; X-ray imaging; application specific integrated circuits; charge-coupled device circuits; digital-analogue conversion; integrated circuit noise; nuclear electronics; readout electronics; ASIC; CCD outputs; CCD sensitivity; CMOS technology; Taiwan Semiconductor Manufacturing Company; application specific integrated circuits; channel; chip; data bits; delta-sigma digitization; electron volt energy 5.9 keV; energy resolution; equivalent noise charge; frequency 44 kHz; input noise; multireadout X-ray CCD; pixel rate; power 70 mW; power consumption; readout circuits; readout noise; size 3 mm; timing resolution; Application specific integrated circuits; CMOS process; CMOS technology; Charge coupled devices; Energy consumption; Fabrication; Integrated circuit noise; Manufacturing processes; Semiconductor device noise; Timing; ASIC; Index Terms; X-ray detector; charge-coupled device(CCD); imaging detector;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-0922-8
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2007.4437195
  • Filename
    4437195