Thermal and electrical characterization of silicon photomultiplier

Author

Petasecca, M. ; Alpat, B. ; Ambrosi, G. ; Azzarello, P. ; Battiston, R. ; Ionica, M. ; Papi, A. ; Pignatel, G.U. ; Haino, S.

Author_Institution

Italian Nat. Inst. of Nucl. Phys., Perugia

Volume

2

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

1275

Lastpage

1278

Abstract

Detection of low levels of light is one of the key aspects in medical and space applications. Silicon photo-multipliers, a novel type of avalanche silicon photo-detector with Geiger mode of operation show promising results and offer superior design options. The performance characteristics of the SiPM are studied and presented in this paper. The leakage current, dark rate and internal gain are characterized as a function of temperature. The investigation has been done in the framework of the DASiPM Collaboration in the contest of the INFN/FBK-irst MEMS project.

Keywords

Geiger counters; photodetectors; photomultipliers; silicon radiation detectors; DASiPM Collaboration; Geiger mode; INFN/FBK-irst MEMS project; avalanche silicon photodetector; dark rate; electrical characterization; internal gain; leakage current; silicon photomultiplier; thermal characterization; Electrons; Leakage current; Micromechanical devices; Nuclear physics; Optoelectronic and photonic sensors; Photomultipliers; Pulse amplifiers; Pulse generation; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4437235

Filename

4437235