Title :
Temperature effects in reverse-type avalanche photodiodes
Author :
Sato, Mitsuhiro ; Yanagida, Takayuki ; Yoshikawa, Akira ; Yatsu, Yoichi ; Kataoka, Jun ; Saito, Fumio
Author_Institution :
Tohoku Univ., Miyagi
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
The present paper shows ionization coefficient ratios, k values, kt and keffs of reverse-type Si avalanche photodiode. Both of keff and K1, tend to increase when APDs are cooled down. The results for keff are 0.0023 plusmn 0.0002 at 20degC, 0.0027 plusmn 0.0003 at 0degC, and 0.0049 plusmn 0.0007 at -20degC. With the result of k1, temperature dependency of k-values indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.
Keywords :
avalanche photodiodes; carrier mean free path; ionisation; nuclear electronics; phonons; readout electronics; silicon radiation detectors; solid scintillation detectors; carrier mean free paths; ionization coefficient ratios; phonon scattering; reverse-type Si avalanche photodiode; scintillation readout; temperature -20 C; temperature 0 C; temperature 20 C; temperature effects; Avalanche photodiodes; Dark current; Ionization; Noise measurement; Optical noise; Pulse amplifiers; Pulse measurements; Signal to noise ratio; Solid scintillation detectors; Temperature dependence;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4437281
