Title :
Characteristics of CVD diamond film detectors for pulsed radiation detection
Author :
Wang, Lan ; Ouyang, Xiaoping ; Fan, Ruyu ; Jin, Yongjie ; Zhang, Zhongbing ; Pan, Hongbo ; Linyue Liu
Author_Institution :
Tsinghua Univ., Beijing
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
Two CVD diamond film detectors with different film quality were made and their properties aiming at pulsed radiation detection were tested and discussed. It has been found that the properties of CVD diamond film detectors are affected seriously by diamond qualities. Impurities, defects, and crystal boundaries which cause traps in diamond increase the dark current, and make charge collection efficiency lower and time response slower. The time response and radiation hardness of CVD diamond film detectors are much better than that of Si-PIN detectors. All the result shows that a diamond film detector with high quality diamond is a much better alternative of Si-PIN detector in pulsed radiation detection.
Keywords :
chemical vapour deposition; crystal defects; dark conductivity; diamond; electron traps; elemental semiconductors; hole traps; impurities; radiation effects; semiconductor counters; semiconductor thin films; CVD diamond film detectors; Si-PIN detectors; crystal boundaries; crystal defects; crystal impurities; dark current; electrons traps; hole traps; pulsed radiation detection; radiation hardness; Dark current; Face detection; Particle beams; Radiation detectors; Semiconductor films; Semiconductor impurities; Semiconductor materials; Telephony; Testing; Time factors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4437285
