Title :
Hot-Carrier and Wear-Out Phenomena in Submicron VLSI´s
Author_Institution :
Central Research Laboratory, Hi.tachi Ltd. Kokubunji, Tokyo 185, Japan
Keywords :
Channel hot electron injection; Circuits; Degradation; Dielectric breakdown; Dielectric substrates; Dielectrics and electrical insulation; Hot carrier injection; Hot carriers; Substrate hot electron injection; Very large scale integration;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
