DocumentCode :
472642
Title :
Effects of Ti Interlevel Existence in Al/Ti/Tin/Ti Structure for Highly Reliable Interconnection
Author :
Maeda, T. ; Nakayama, T. ; Matsunaga, J. ; Aoki, R. ; Shinki, T. ; Shima, S.
Author_Institution :
Toshiba Corporation, Semiconductor Device Engineering Laboratory 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
50
Lastpage :
51
Keywords :
Contacts; Electromigration; Etching; Integrated circuit interconnections; Metallization; Nitrogen; Semiconductor films; Sputtering; Tin; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480298
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472642
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