• DocumentCode
    472646
  • Title

    Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages

  • Author

    Fuse, G. ; Odanaka, S. ; Sasago, M. ; Fukumoto, M. ; Shinohara, S. ; Umimoto, H. ; Yabu, T. ; Ohzone, T. ; Ishihara, T.

  • Author_Institution
    Semiconductor Research Center Matsushita Electric Industrial Co., Ltd. Moriguchi-shi, Osaka, 570 Japan
  • fYear
    1985
  • fDate
    14-16 May 1985
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    Trench isolation technology with boron implanted vertical side-walls is presented andproved to be useful for completely suppressing humps in subthreshold current and controlling finely narrow width effects of n-MOS FETs. The technology is promising one to realize submicron trench isolation less than 0.5 ¿m.
  • Keywords
    Boron; Etching; FETs; Isolation technology; Scattering; Semiconductor films; Silicon; Substrates; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1985. Digest of Technical Papers. Symposium on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-930813-09-3
  • Type

    conf

  • Filename
    4480302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472646