Title :
A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode
Author :
Ito, T. ; Horie, H. ; Fukano, T. ; Ishikawa, H.
Author_Institution :
Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, 243-01 Japan
Abstract :
A low resistive MTP gate electrode has been developed for MOS VLSIs. The MTP gate features are as follows: 1) The resistivity of the electrode is reduced by about two orders of magnitude below that of poly Si even after annealing at 1100°C.
Keywords :
Conductivity; Diodes; Electrodes; FETs; Optical films; Semiconductor films; Temperature; Threshold voltage; Tunneling; Very large scale integration;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
