A New Half-Micron P-Channel MOS FET with Efficient Punchthrough Stops

Author

Odanaka, S. ; Fukumoto, M. ; Fuse, G. ; Shinohara, A. ; Sasago, M. ; Yabu, T. ; Ohzone, T. ; Ishihara, T.

Author_Institution

Semiconductor Research Center Matsushita Electric Ind. Co., Ltd. Moriguchi-shi, Osaka, 570 Japan

fYear

1985

fDate

14-16 May 1985

Firstpage

Lastpage

Keywords

Boron; CMOS technology; Capacitance; Doping; Etching; FETs; Fuses; Subthreshold current; Surface resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Conference_Location

Kobe, Japan

Print_ISBN

4-930813-09-3

Type

Filename

4480304

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