Title :
A New Half-Micron P-Channel MOS FET with Efficient Punchthrough Stops
Author :
Odanaka, S. ; Fukumoto, M. ; Fuse, G. ; Shinohara, A. ; Sasago, M. ; Yabu, T. ; Ohzone, T. ; Ishihara, T.
Author_Institution :
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd. Moriguchi-shi, Osaka, 570 Japan
Keywords :
Boron; CMOS technology; Capacitance; Doping; Etching; FETs; Fuses; Subthreshold current; Surface resistance; Threshold voltage;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
