Title :
Submicron Lithography Using Focused-Ion-Beam Exposure Followed by a Dry Development
Author :
Kato, T. ; Morimoto, H. ; Tsukamoto, K. ; Shinohara, H. ; Inuishi, M.
Author_Institution :
LSI R&D Laboratory, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, 664 Japan
Keywords :
Collision mitigation; Etching; FETs; Fabrication; III-V semiconductor materials; Ion beams; Lithography; Oxidation; Plasma applications; Resists;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
