472664

Deep Trench Well Isolation for 256Kb 6T CMOS Static RAM

Hashimoto, Kazuhiko ; Yokogawa, Shunji ; Kakumu, Masakazu ; Kinugawa, Kasaaki ; Sawada, Kazuhiro ; Sakurai, Takayasu ; Isobe, Mitsuo ; Matsunaga, Jun-Ichi ; Iizuka, Tetsuya ; Nagakubo, Yoshihide

Semiconductor Device Engineering Lab., Toshiba Corporation, Komukai-Toshiba-cho, Kawasaki, 210 Japan

1985

14-16 May 1985

94

95

CMOS integrated circuits; CMOS technology; Filling; Isolation technology; Leakage current; Read-write memory; Semiconductor devices; Stress; Substrates; Testing;

English

ieee

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Kobe, Japan

4-930813-09-3

conf

4480320