DocumentCode
472667
Title
A High Density Single-Poly Si Structure Eeprom with LB (Lowered Barrier Height) Oxide for VLSI´s
Author
Matsukawa, N. ; Morita, S. ; Shinada, K. ; Miyamoto, J. ; Tsujimoto, J. ; Iizuka, T. ; Nozawa, H.
Author_Institution
Semiconductor Device Engineering Laboratory, Toshiba Kawasaki 210, Japan
fYear
1985
fDate
14-16 May 1985
Firstpage
100
Lastpage
101
Keywords
Annealing; Circuits; Contact resistance; EPROM; Ion implantation; Laboratories; Microprocessor chips; Semiconductor devices; Thermionic emission; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480323
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