DocumentCode :
472669
Title :
Hot-Carrier Induced Degradation of N-MOSFET´s in Inverter Operation
Author :
Horiuchi, T. ; Mikoshiba, H. ; Nakamura, Kentaro ; Hamano, K.
Author_Institution :
NEC Corporation, VLSI Development Division 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
104
Lastpage :
105
Keywords :
Degradation; Hot carriers; Life estimation; Lifetime estimation; MOSFET circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Stress; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480325
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472669
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