Stress Bias Dependence of Hot Carrier Degradation of NOSFETs

Author

Katto, H. ; Okuyama, K. ; Meguro, S. ; Suzuki, N.

Author_Institution

Musashi Works, Hitachi Ltd. 1450 Josuihon-cho, Kodaira, Tokyo, 187 Japan

fYear

1985

fDate

14-16 May 1985

Firstpage

106

Lastpage

107

Keywords

CMOS process; Degradation; Fabrication; Hot carriers; Implants; Oxidation; Passivation; Stress; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Conference_Location

Kobe, Japan

Print_ISBN

4-930813-09-3

Type

Filename

4480326

Link To Document