Title :
A Study of Gate Current and Reliability in Ultra-Thin Gate Oxide MOSFET´s
Author :
Toriumi, A. ; Yoshimi, M. ; Taniguchi, K.
Author_Institution :
VLSI Research Center, Toshiba Corporation Komukai, Saiwaiku, Kawasaki, 210 Japan
Keywords :
Degradation; Electron traps; Fabrication; Hot carriers; Impact ionization; Kinetic energy; Predictive models; Stress; Substrate hot electron injection; Voltage;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
