DocumentCode
472674
Title
Metal-Coated Lightly-Doped Drain (MLD) MOSFET´s for Sub-Micron VLSI´s
Author
Tsunashima, Y. ; Wada, T. ; Yamada, K. ; Moriya, T. ; Taniguchi, K. ; Kashiwagi, M. ; Tango, H. ; Nakamura, M. ; Dang, R.
Author_Institution
VLSI Research Center, Toshiba Corporation 1, Toshiba-cho, Komukai, Saiwai-ku, Kawasaki, 210, Japan
fYear
1985
fDate
14-16 May 1985
Firstpage
114
Lastpage
115
Keywords
Design optimization; Electrons; Impact ionization; MOSFET circuits; Plasma temperature; Silicidation; Silicides; Silicon; Surface resistance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480330
Link To Document