Title :
Submicron MLDO NMOSFETs for 5V Operation
Author :
Kinugawa, Masaaki ; Kakumu, Masakazu ; Yokogawa, Shunji ; Hashimoto, Kazuhiko
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation; Kawasaki Japan
Keywords :
Degradation; Design engineering; Hot carriers; MOSFET circuits; Power engineering and energy; Power supplies; Semiconductor devices; Stress; Substrate hot electron injection; Voltage;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
