The Low Pressure Chemical Vapor Deposition of Silicon Oxide Films in the Temperature Range 450 to 600° C from a New Source: Diacetoxyditertiarybutoxysilane

The LPCVD-DADBS process has demonstrated that: 1) perfectly conformal coatings are obtained at 450 and 500° C, and only slightly less so at 575°; 2) phosphorus-doped oxide is produced when trimethylphosphite and oxygen is added to the gas stream and the doped oxide has an intrinsic stress 0.42 times that of undoped oxide; 3) silicon oxide formation occurs without any incorporation of carbon; and 4) the electrical properties are more than adequate for device applications.