Title :
New Bias Sputtering System with High Throughput, High Uniformity and Low Damage
Author :
Hashimoto, C. ; Machida, K. ; Tadachi, C. ; Takeuchi, H. ; Oikawa, H.
Author_Institution :
NTT Electrical Communications Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi 243-01, Japan
Abstract :
A new bias sputtering system with high throughput, high uniformity and low damage has been developed. The substantial progress toward practical use of bias sputtering has been made by this system.
Keywords :
Capacitance-voltage characteristics; Capacitors; Cathodes; Constitution; Electric breakdown; Insulation; Radio frequency; Sputter etching; Sputtering; Throughput;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
