DocumentCode
472693
Title
New Bias Sputtering System with High Throughput, High Uniformity and Low Damage
Author
Hashimoto, C. ; Machida, K. ; Tadachi, C. ; Takeuchi, H. ; Oikawa, H.
Author_Institution
NTT Electrical Communications Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi 243-01, Japan
fYear
1986
fDate
28-30 May 1986
Firstpage
35
Lastpage
36
Abstract
A new bias sputtering system with high throughput, high uniformity and low damage has been developed. The substantial progress toward practical use of bias sputtering has been made by this system.
Keywords
Capacitance-voltage characteristics; Capacitors; Cathodes; Constitution; Electric breakdown; Insulation; Radio frequency; Sputter etching; Sputtering; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480357
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