Title :
Comparison of TiSi2 and WSI2 Silicided Shallow Junctions for Sub-Micron CMOSs
Author :
Kobayashi, Nobuyoshi ; Hashimoto, Naotaka ; Ohyu, Kiyonori ; Kaga, Toru ; Iwata, Seiichi
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
Keywords :
Annealing; CMOS technology; Chemicals; Conductivity; Impurities; Laboratories; MOSFETs; Optical films; Silicidation; Silicides;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
