DocumentCode :
472703
Title :
A Highly Reliable Pure Al Metallization with Low Contact Resistance Utilizing Oxygen-Stuffed TiN Barrier Layer
Author :
Iwabuchi, S. ; Shima, S. ; Moriya, T. ; Maeda, T.
Author_Institution :
VLSI Research Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
55
Lastpage :
56
Keywords :
Contact resistance; Grain boundaries; Heat treatment; Heating; Metallization; Semiconductor device reliability; Substrates; Surface treatment; Tin; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480367
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472703
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