DocumentCode :
472704
Title :
Tungsten Photochemical Vapor Deposition for VLSI Application and its Reaction Mechanism
Author :
Itoh, Hitoshi ; Moriya, Takahiko ; Toyama, Masaharu
Author_Institution :
Toshiba Research and Development Center Komukai, Kawasaki, 210, Japan
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
57
Lastpage :
58
Keywords :
Automatic control; Chemical vapor deposition; Inductors; Kinetic theory; Photochemistry; Pressure control; Steady-state; Temperature control; Tungsten; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480368
Link To Document :
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