Title :
An Analytical Perspective of LDD MOSFETs
Author :
Mayaram, K. ; Lee, J. ; Chan, T.Y. ; Hu, C.
Author_Institution :
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA 94720
Abstract :
The quasi-two-dimensional approach has been used to develop a simple electric-field model for LDD MOSFETs. This paper presents an analytical perspective of the field distribution, cause of the double-peak characteristics of Isub, synthesis of LDD doping profile, effect of source/drain offset, and the short channel effect in LDD devices. This perspective supplements the experimental studies and computer simulations of LDD structures.
Keywords :
Cause effect analysis; Computer simulation; Differential equations; Doping profiles; Gaussian channels; MOSFETs; Neodymium; Semiconductor process modeling; Uncertainty; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
