Title :
Hole Trapping and Hot-Carrier Induced Device Instability in Thin Nitride/Oxide IGFETs
Author :
Young, K.K. ; Chan, T.Y. ; Hu, C. ; Oldham, W.G.
Author_Institution :
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California, Berkeley, CA 94720
Keywords :
Boron; Degradation; Dielectric substrates; Electron traps; Hot carriers; Hydrogen; Intrusion detection; Laboratories; Transconductance; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
