• DocumentCode
    472711
  • Title

    Reliability Aspects of 100A Inter-Poly Dielectrics for High Density VLSI´s

  • Author

    Mori, S. ; Sato, M. ; Yoshikawa, K. ; Nozawa, H. ; Yasuhisa, N. ; Yanase, T.

  • Author_Institution
    Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
  • fYear
    1986
  • fDate
    28-30 May 1986
  • Firstpage
    71
  • Lastpage
    72
  • Keywords
    Capacitors; Dielectric devices; Dielectric thin films; Fabrication; Integrated circuit reliability; Leakage current; Oxidation; Semiconductor device reliability; Stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1986. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Type

    conf

  • Filename
    4480375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472711